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Semiconductor-on-insulator (SOI) substrates with ultra-thin SOI layers and buried oxides

机译:具有超薄SOI层和掩埋氧化物的绝缘体上半导体(SOI)衬底

摘要

Semiconductor-on-insulator (SOI) substrates including a buried oxide (BOX) layer having a thickness of less than 300 Å are provided. The (SOI) substrates having the thin BOX layer are provided using a method including a step in which oxygen ions are implanted at high substrate temperatures (greater than 600° C.), and at a low implant energy (less than 40 keV). An anneal step in an oxidizing atmosphere follows the implant step and is performed at a temperature less than 1250° C. The anneal step in oxygen containing atmosphere converts the region containing implanted oxygen atoms formed by the implant step into a BOX having a thickness of less than 300 Å. In some instances, the top semiconductor layer of the SOI substrate has a thickness of less than 300 Å.
机译:提供了绝缘体上半导体(SOI)衬底,该衬底包括厚度小于300的掩埋氧化物(BOX)层。使用包括以下步骤的方法来提供具有薄BOX层的(SOI)衬底:在该步骤中,以高衬底温度(大于600℃)并且以低注入能量(小于40keV)注入氧离子。在注入步骤之后在氧化气氛中进行退火步骤,并在低于1250°C的温度下进行。在含氧气氛中的退火步骤将包含由注入步骤形成的注入氧原子的区域转换为厚度小于BOX的BOX。大于300Å。在某些情况下,SOI衬底的顶部半导体层的厚度小于300。

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