The peculiarities of buried layer formation obtained by co-implantation of O2udions with the energy of 130 keV and carbon ions within the energy range of 30-50 keVudhave been investigated. The corresponding ion doses for carbon and oxygen ions wereudequal to 2 x 10¹⁶ cm⁻² and 1.8 x 10¹⁷ cm⁻², respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO₂ layer.
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机译：已经研究了通过共同注入能量为130 keV的O2 udions和能量范围为30-50 keV ud的碳离子获得的埋层形成的特殊性。碳和氧离子的相应离子剂量分别等于2×10 15 cm -2和1.8×10 15 cm -2。已经观察到在1150℃下退火导致增强的氧向具有最大碳浓度的区域扩散。用退火样品固有的SIMS深度剖面分析X射线衍射图，表明在碳和氧空位浓度最大的区域内形成了Si纳米团簇。观察到强烈的发光，最大波长为600nm，这可能与化学计量薄的SiO 2层中的硅纳米夹杂物有关。
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