A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

机译：掺杂剂相关的带隙窄化模型在双极器件仿真中的应用

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We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGe HBT using a hydrody-namic transport model.

机译：我们提出了一个新的带隙变窄模型，该模型考虑了任意有限温度下的半导体材料和掺杂剂种类。这种统一的处理对于精确的设备仿真特别有用。作为一个特定的示例，我们使用二维设备模拟器MINIMOS-NT使用水动力传输模型研究了梯度成分Si / SiGe HBT的电学行为。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|105-108|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
V. Palankovski; G. Kaiblinger-Grujin; H. Kosina; S. Selberherr;
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作者单位

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

Institute for Microelectronics, TU Vienna Gusshausstr. 27-29, A-1040 Vienna, Austria;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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专利

1. Implications of dopant-dependent low-field mobility and band gap narrowing on the bipolar device performance [J] . V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr Journal de Physique, IV: Proceedings of International Conference . 1998,第3期

机译：掺杂剂依赖性低场迁移率和带隙变窄对双极器件性能的影响
2. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters [J] . Schumacher JO., Heiser G., Aberle AG., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2001,第1a4期

机译：改进的带隙变窄模型在掺磷硅发射极复合性能数值模拟中的应用
3. Direct arylation polymerization approach for the synthesis of narrow band gap cyclopentadithiophene based conjugated polymer and its application in solar cell devices [J] . Sharma Bhavna, Singh Ashish, Afroz Mohammad Adil, Synthetic Metals . 2017,第期

机译：直接芳基化聚合方法，用于合成窄带间隙环戊二噻吩基缀合聚合物及其在太阳能电池装置中的应用
4. A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation [C] . V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, International conference on simulation of semiconductor devices and processes . 1998

机译：双极设备仿真的掺杂剂依赖带隙缩小模型应用
5. Development of narrow gap semiconductor materials and devices for optoelectronic applications. [D] . Wang, Ding. 2013

机译：开发用于光电应用的窄间隙半导体材料和器件。
6. Highly Visible Light Responsive Narrow Band gap TiO2 Nanoparticles Modified by Elemental Red Phosphorus for Photocatalysis and Photoelectrochemical Applications [O] . Sajid Ali Ansari, Moo Hwan Cho -1

机译：元素红磷修饰的高可见光响应窄带隙TiO2纳米粒子用于光催化和光电化学应用
7. A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation [O] . V. Palankovski, G. Kaiblinger-grujin, H. Kosina, 2015

机译：双极器件仿真中依赖于掺杂剂的带隙窄化模型应用
8. Narrow Band Gap InGaSb, InAlAsSb Alloys for Electronic Devices. [R] . B. P. Tinkham E. R. Glaser J. B. Boos J. G. Champlain R. Magno 2006

机译：窄带间隙InGasb，用于电子器件的Inalassb合金。

A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

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