Narrow Band Gap InGaSb, InAlAsSb Alloys for Electronic Devices.

摘要

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors (HBTs). Several p-n ...