HOMOGENEOUS JUNCTION BIPOLAR TRANSISTOR HAVING BASE WITH NARROW EFFECTIVE BAND GAP AND MANUFACTURE OF BIPOLAR TRANSISTOR

摘要

PURPOSE: To reduce the base resistance by forming a first conductivity type base region with plural repeating layers of second conductivity type impurity layers and intrinsic layers and by forming a base region, an emitter region and a corrector region by the same material. CONSTITUTION: A corrector is constituted of a corrector region 12 doped heavily with n+ and a transient corrector region 14 doped moderately with n. A superlattice base region 16 is constituted of plural alternating layers of p+ conductivity type impurity layers and intrinsic layers 20 made of undoped semiconductor material. Each pair of the adjacent impurity layer 18 and the intrinsic layer 20 forms a cycle of the superlattice in the base region. The band gap is made narrow by the base having this superlattice construction. An emitter region 22 is formed adjacent to the n conductivity type base region 16. Heavily doped p+ ohmic contact regions 24 and 26 are grown on the base region 16.