Heterogeneous Nano- to Wide-scale co-integration of Beyond-Si and Si CMOS Devices to Enhance Future Electronics

摘要

This paper overviews possibilities of heterogeneous material and device integrations base on selective area epitaxial growth. The options applicable at various scale from that of individual devices like FinFETs and Nanowires to wide areas of ⅢV-Ge materials are described. Finally, multi-level integration of new 2-D crystals will be discussed as well.