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Silicon on insulator CMOS and microelectromechanical systems: Mechanical devices, sensing techniques and system electronics.

机译:绝缘体上的CMOS和微机电系统中的硅:机械设备,传感技术和系统电子设备。

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摘要

The marriage of integrated circuits and microelectromechanical systems (MEMS) allows for the design of compact, low power, high performance sensing solutions. These devices are on the cutting edge of technology pushing the limits of fabrication and integration.; This thesis will present work on building MEMS devices and the supporting electronics needed to control, sense and output the information content of the MEMS device in Silicon-On-Insulator (SOI) CMOS processes. The majority of this work is performed in an SOI process available from Peregrine Semiconductor known as SOS. To our knowledge no other research has been performed using the SOS process to build CMOS MEMS, or to implement novel CMOS based optical transduction schemes.; The purpose of this thesis is to first, introduce the reader to MEMS devices and SOI/SOS CMOS processes. Second, present the groundwork needed for SOS MEMS design. Third, review MEMS transduction methods and present new CMOS based optical transduction methods. Fourth, review basic MEMS structures, properties and explain MEMS sensing solutions. Fifth, to present descriptions and testing of the electronics necessary to interface with MEMS devices. Sixth, present complete integrated MEMS systems. Lastly, to review pioneering work performed in a new 3D CMOS process which provides advantages for both CMOS MEMS and optical transduction.; The thesis will begin by introducing the reader to MEMS devices, SOI CMOS and SOS CMOS, giving them a basic understanding of each. It will then explain the specific advantages and disadvantages of building MEMS and integrated circuits in these types of processes. I will present a wide range of work performed to fabricate and characterize MEMS devices in SOI processes. I will present a new MEMS sensing method based on optical interferometry. I will review fabricated SOS MEMS devices and their functionality. I will review and show characterization of system components necessary to build a complete integrated sensor. Complete systems will be shown and test results presented. Lastly the results from a new 3D SOI CMOS process will be presented.
机译:集成电路和微机电系统(MEMS)的结合允许设计紧凑,低功耗,高性能的传感解决方案。这些设备处于技术的最前沿,从而限制了制造和集成的极限。本文将介绍有关构建MEMS器件以及在绝缘体上硅(SOI)CMOS工艺中控制,感测和输出MEMS器件的信息内容所需的支持电子器件的工作。这项工作的大部分工作是在Peregrine Semiconductor的SOI工艺中进行的,该工艺称为SOS。据我们所知,尚没有使用SOS工艺进行其他研究来构建CMOS MEMS或实现基于CMOS的新型光转换方案。本文的目的是首先向读者介绍MEMS器件和SOI / SOS CMOS工艺。其次,介绍SOS MEMS设计所需的基础。第三,回顾MEMS转导方法并提出基于CMOS的新光学转导方法。第四,回顾MEMS的基本结构,特性并解释MEMS传感解决方案。第五,介绍与MEMS器件接口所必需的电子器件的描述和测试。第六,目前完整的集成MEMS系统。最后,回顾以新的3D CMOS工艺进行的开拓性工作,该工艺为CMOS MEMS和光学转换提供了优势。本文将从向读者介绍MEMS器件(SOI CMOS和SOS CMOS)开始,使他们对每种器件都有基本的了解。然后,将解释在这些类型的过程中构建MEMS和集成电路的特定优缺点。我将介绍在SOI工艺中制造和表征MEMS器件所进行的大量工作。我将介绍一种基于光学干涉术的新型MEMS传感方法。我将回顾制造的SOS MEMS设备及其功能。我将回顾并展示构建完整的集成传感器所需的系统组件的特性。将显示完整的系统并显示测试结果。最后,将介绍新的3D SOI CMOS工艺的结果。

著录项

  • 作者

    Tejada, Francisco.;

  • 作者单位

    The Johns Hopkins University.;

  • 授予单位 The Johns Hopkins University.;
  • 学科 Engineering Electronics and Electrical.; Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 227 p.
  • 总页数 227
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;机械、仪表工业;
  • 关键词

  • 入库时间 2022-08-17 11:39:03

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