Modeling GaN HEMTs using thermal particle-based device simulator

摘要

A Monte Carlo device simulator was developed to investigate the electronic transport properties in AlGaN/AlN/GaN High Electron Mobility Transistors (HEMTs). Two different polarization models were considered to introduce electromechanical coupling and changes in the piezoelectric polarization charge at the interface and their effect on the device characteristics was compared. The influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel was determined. Our investigations suggest that 10% increase in the polarization charge is needed to match the experimental data when the gate voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface [1].