GaN TYPE HEMT SIMULATOR

摘要

PROBLEM TO BE SOLVED: To solve the problem that a conventional equivalent circuit model is incapable of clearing a difference between an intrinsic transconductance of a GaN type HEMT measured in a DC and that measured by RE and a relation with physical factors causing the difference and hence it is impossible to effectively execute simulation applied to the analysis of element characteristics and the optimization of a device structure.;SOLUTION: A simulator incorporates a GaN type HEMT equipment circuit model comprising a parallel circuit of a first capacitance Cdr and second resistance Rdr is provided at a drain node and a parallel circuit of a second capacitance Csr and fourth resistance Rsr is provided at a source node in an equivalent circuit model of a compound semiconductor FET.;COPYRIGHT: (C)2002,JPO