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Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

机译：用于缩放多单元GaN HEMT功率器件的宽带集总封装建模

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Subrata Halder; Faramarz Kharabi; Tim Howle; John Mcmacken; Christopher Burns; Michael Lefevre; Dave Runton; Joe Gering;
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年度 2013
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1. Polarization based charge density drain current and small-signal model for nano-scale AlInGaN/AlN/GaN HEMT devices [J] . D. Godwinraj, Hemant Pardeshi, Sudhansu Kumar Pati, Superlattices and microstructures . 2013,第FEBa期

机译：基于极化的电荷密度漏极电流和纳米AlInGaN / AlN / GaN HEMT器件的小信号模型
2. A 2DEG charge density based drain current model for various Al and in molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices [J] . Raj G., Pardeshi H., Pati S.K., Journal of Semiconductors . 2013,第4期

机译：基于2DEG电荷密度的漏极电流模型，用于各种Al和依赖于分数迁移率的纳米级AlInGaN / AlN / GaN HEMT器件
3. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [J] . Huolin Huang, Feiyu Li, Zhonghao Sun, Micromachines . 2018,第12期

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
4. Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices [C] . Halder Subrata, Kharabi Faramarz, Howle Tim, ARFTG Microwave Measurement Conference . 2012

机译：用于缩放多单元GaN HEMT功率器件的宽带集总封装建模
5. Modeling and Characterization of High-power Electronic Devices: System Analysis of Laser Diodes with Flash Boiling and GaN HEMT Reliability Modeling [D] . Schlenker, Evan L. 2018

机译：高功率电子设备的建模与鉴定：闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
7. Design of class E power amplifiers by using scalable electro-thermal GaN HEMT model [O] . Xiansuo Liu, Chuicai Rong, Yuehang Xu, 2017

机译：使用可扩展电热GaN HEMT模型设计E类功率放大器的设计
8. Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. [R] . Nochetto, H. C., Jankowski, N. R., Morgan, B., 2012

机译：结合GaN衬底热边界电阻的氮化镓（GaN）高电子迁移率晶体管（HEmT）器件的混合多栅模型。

Broadband lumped package modeling for scaling multi-cell GaN HEMT power devices

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