GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO₃substrates and their application to highly efficient surface acousticwave convolver

摘要

Presents for the first time the growth of GaSb/InSb/AlGaAsSbnheterostructures on LiNbO₃ substrates by molecular beamnepitaxy and their application to a novel strip-coupled surface acousticnwave (SAW) convolver. High efficiencies of more than -14 dBm have beennobtained by using the GaSb/InSb/AlGaAsSb heterostructures and the newnelectrode design of the SAW convolver. In the spread spectrumncommunication system, the highly efficient SAW convolver opens up thenpossibility for a high performance and low power consumption demodulatornof the receiver