Photodiodes Based on n-GaSb-GaInAsSb/p-AlGaAsSb Heterostructures Grown Using Rare-Earth Elements for the 1.1-2.4 _m Spectral Range

摘要

Photodiodes sensitive in the wavelength range of 1.1-2.4 tim have been created based on n-GaSb_GaInAsSb/p-AIGaAsSb heterostructures with a narrow-gap n-GaInAsSb layer (E_g = 0.5 eV) grown in the pres ence of a rare-earth element (holmium). The electron concentration in the narrow-gap layer is n = I x 10~16 cm~-3, which is about one-fourth of that in an analogous structure grown without the rare-earth element. The proposed structure is characterized by increased quantum efficiency and response speed.