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III-V Heterostructure Avalanche Photodiode Modules for Fiber Optic Communication Links in the 1.0 to 1.3 Micrometer Spectral Range

机译:用于光纤通信链路的III-V异质结构雪崩光电二极管模块,适用于1.0至1.3微米光谱范围

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Hybrid-structure InP-InGaAsP APDs have been fabricated which have negligible dark current (I sub D < 6 nA at M = 30). The excess noise factor F, for a hole-initiated avalanche, has been determined to be F/M = 0.42 + or - 0.10 for 5 < or = M < or = 35. Conventional structure high-bandgap (1.27 eV) InGaAsP APDs have been fabricated. These resemble low-leakage InP APDs rather than the high-leakage low-bandgap (1.00 eV) InGaAsP APDs. Low-noise bipolar transimpedance preamps have been designed and fabricated. These have bandwidths out to 500 MHz (for R sub f = 1 K omega). The sensitivity of the best hybrid APDs used with these preamps is estimated to be -46.6 dBm for a 100 Mbit/sec, 10 to the minus 9th power bit error rate system, operating at a wavelength of 1.1 microns. (Author)

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