Heterostructure for mid-infrared spectral range, and light emitting diode and photodiode manufacturing method based thereon

摘要

The present invention relates to a method for producing a spontaneous emission light source based on an AIIIBV semiconductor compound for a spectral range of 2.6 to 4.7 μm, and a photosensitive structure for a spectral range of 2.0 to 4.7 μm. It relates to manufacturing technology. In the first embodiment, the heterostructure includes a substrate containing InAs, a barrier layer provided on the substrate and containing InSbP, and an active layer provided on the barrier layer and containing InAsSbP. The light emitting diode manufactured based on the heterostructure of the first embodiment emits light at a wavelength in the range of 2.6 to 3.1 μm. In the second embodiment, the heterostructure includes a substrate containing InAs, an active region provided on the substrate and containing InAsSb, and a barrier layer provided on the active region and containing InSbP. The active region can include an InAsSb bulk active layer, an InAs / InAsSb quantum well, or a GaInAs / InAsSb strained superlattice. The light emitting diode manufactured based on the heterostructure of the second embodiment emits light at a wavelength in the range of 3.1 to 4.7 μm, and the photodiode has a wide band sensitivity in the range of 2.0 to 4.7 μm. . In the method for producing a heterostructure, tert-butylarsine is used as an arsenic source and tert-butylphosphine is used as a phosphorus source.