Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

摘要

Energy loss rates of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures are theoretically investigated over a wide range of temperature based on the electron-one-phonon and electron-two-phonon interactions. Calculations are presented for electron acoustic one-phonon interaction via deformation potential and piezoelectric coupling and electron-LO phonon interaction with hot phonon effect. In addition, energy loss rate due to electron-two-zone edge transverse acoustic (TA) phonons is also presented. A very good agreement is obtained between the calculations and experimental data in GaInAs/AlInAs structure with the inclusion of electron-two-zone edge TA phonon interaction. In all these three structures energy loss is dominated by (i) acoustic one-phonon scattering at low temperatures, (ii) two-TA zone edge phonons at intermediate temperatures and (iii) LO phonons at high temperatures. It is observed that, hot phonon effect reduces the energy loss rate considerably in these structures. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 28]