GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO/sub 3/ substrates and their application to highly efficient surface acoustic wave convolver

摘要

Presents for the first time the growth of GaSb/InSb/AlGaAsSb heterostructures on LiNbO/sub 3/ substrates by molecular beam epitaxy and their application to a novel strip-coupled surface acoustic wave (SAW) convolver. High efficiencies of more than -14 dBm have been obtained by using the GaSb/InSb/AlGaAsSb heterostructures and the new electrode design of the SAW convolver. In the spread spectrum communication system, the highly efficient SAW convolver opens up the possibility for a high performance and low power consumption demodulator of the receiver.