The modeling and simulation of the frequency characteristics on deep-submicron fully depleted SOI BJMOSFET

摘要

The high frequency model of deep-submicron fully depleted SOI BJMOSFET has been proposed theoretically and its frequency characteristics curves have been achieved by HSPICE software. Compared to deep-submicron fully depleted SOI MOSFET at the same condition, it's proved that the new-style SOI device has much better frequency characteristics and more rapid working speed. So it's a kind of new excellent SOI device.