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Atomic Layer Deposition/Molecular Layer Deposition for Packaging and Interconnect of N/MEMS

机译:用于N / MEMS封装和互连的原子层沉积/分子层沉积

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摘要

Atomic layer deposition (ALD)/molecular layer deposition (MLD) processes are able to fabricate nano-scaled inorganic/organic multilayers. Such multilayers are essential to novel packaging and interconnect technologies for NEMS/MEMS. ALD/MLD coatings could reduce water vapor transmission rate down to 5X10"5 g/m2/day or lower for excellent hermetic/vacuum sealing. ALD/MLD coatings can also modify nanowireanomesh structures critical to flexible thermal ground planes that can reach an effective thermal conductivity of 30,000 W/mK and heat flux removal of 200 W/cm2. ALD/MLD coatings can enhance the stability while reducing thickness of an embedded Li-ion battery. In addition, the ALD/MLD-based inorganic/organic multilayer can be used for interconnecting nanowire-based photonics.
机译:原子层沉积(ALD)/分子层沉积(MLD)工艺能够制造纳米级的无机/有机多层。这种多层对于NEMS / MEMS的新型封装和互连技术至关重要。 ALD / MLD涂层可将水蒸气透过率降低至5X10“ 5 g / m2 /天或更低,以实现出色的气密/真空密封。ALD/ MLD涂层还可修饰对柔性热接地层至关重要的纳米线/纳米结构,从而可以达到有效的30,000 W / mK导热系数和200 W / cm2的热通量去除率ALD / MLD涂层可以在降低嵌入式锂离子电池厚度的同时提高稳定性,此外,基于ALD / MLD的无机/有机多层膜可用于互连基于纳米线的光子。

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