ATOMIC LAYER DEPOSITION APPARATUS, FILM-FORMING METHOD USING ATOMIC LAYER DEPOSITION APPARATUS, AND CLEANING METHOD OF ATOMIC LAYER DEPOSITION APPARATUS

摘要

A plasma atomic layer deposition apparatus includes: a source gas supply port functioning also as a cleaning gas supply port provided on a first side wall of a film-forming container; and a source gas exhaust port functioning also as a cleaning gas exhaust port provided on a second side wall opposed to the first side wall of the film-forming container.