Simulating the Device Characteristics of GaN Light Emitting Diode

机译：模拟GaN发光二极管的器件特性

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摘要

In this proposal, the state-of-the-art two-dimensional process simulation tool, Atlas, from SILVACO is being evaluated for the purpose of studying light-emitting diodes (LEDs).

机译：在此提案中，目前正在评估SILVACO公司最新的二维过程仿真工具Atlas，以研究发光二极管（LED）。

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来源
《Proceedings of 2010 CrossStrait Conference on Information Science and Technology.》|2010年|p.797-799|共3页
会议地点 Qinhuangdao(CN);Qinhuangdao(CN)
作者
Wen-Yu Cheng; Shiou-Ying Cheng;
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作者单位

Department of Electronic Engineering, Ilan University, Ilan;

Department of Electronic Engineering, Ilan University, Ilan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;自动化技术、计算机技术;自动化技术、计算机技术;
关键词
SILVACO; GaN; light-emitting diodes;

机译：SILVACO;氮化镓;发光二极管;

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1. Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices [J] . 无中国物理：英文版 . 2010,第001期

机译：GaN基发光二极管晶片的表面处理对发光二极管器件漏电流的影响
2. Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices [J] . Wang Liang-Ji, Zhang Shu-Ming, Zhu Ji-Hong, 中国物理：英文版 . 2010,第001期
3. Device characteristics and thermal analysis of GaN-based vertical light-emitting diodes with different types of packages [J] . Guan Xiang-Yu, Lee Hee Kwan, Lee Soo Hyun, Solid-State Electronics . 2017,第jana期

机译：不同封装类型的GaN基垂直发光二极管的器件特性和热分析
4. Simulating the Device Characteristics of GaN Light Emitting Diode [C] . Wen-Yu Cheng, Shiou-Ying Cheng Cross-Strait Conference on Information Science and Technology . 2010

机译：模拟GaN发光二极管的器件特性
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate [O] . Moonsang Lee, Hyunkyu Lee, Keun Man Song, 2018

机译：从硅衬底上分离出来的独立式GaN上的InGaN / GaN蓝色发光二极管的正向隧穿特性研究
7. Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices [O] . Gil Ho Gu, Dong Hyun Jang, Ki Bum Nam, 2013

机译：在发光二极管器件中InGaN / GaN多量子阱中In和宽度波动的组成波动

Simulating the Device Characteristics of GaN Light Emitting Diode

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