METHOD OF GROWING GAN LAYER FOR MANUFACTURING LIGHT EMITTING DIODE HAVING ENHANCED LIGHT EXTRACTION CHARACTERISTICS, METHOD OF MANUFACTURING LIGHT EMITTING DIODE USING THE SAME, AND LIGHT EMITTING DIODE DEVICE THEREOF

摘要

A method of growing a GaN layer, a method of manufacturing a light emitting diode using the same and a light emitting diode device manufactured by the same are provided to maximize the number of crystal faces formed on a side of the GaN layer. A GaN thin film(20) is formed on a substrate, and an insulating layer pattern(30) defining a hexagonal opening pattern(40) is formed on the GaN thin film to expose an upper surface of the GaN thin film in a hexagonal shape. The insulating layer pattern is formed in such a manner that a line connecting opposite cusps of a hexagon is laid at an angle of 30 degrees to direction [1000] of GaN. A GaN layer(50) is selectively formed on the hexagonally exposed GaN thin film by using the insulating layer pattern as a mask to have a thickness of 20 to 70 mum, so that a horizontal cross section of the GaN layer has 12 angled shape.