Method of growing GaN layer for manufacturing Light Emitting Diode having enhanced light extraction characteristics, Method of manufacturing Light Emitting Diode using the same, and Light Emitting Diode device thereof

摘要

The present invention is the deposition of the gallium nitride layer for the production of light emitting diodes and light extraction method, a method for a method of manufacturing a light emitting diode using, and discloses a light emitting diode manufactured by this method. GaN layer formation method according to the present invention, to form a gallium nitride thin film on a substrate, the top surface of the GaN thin film forming an insulating film pattern that defines a hexagonal opening pattern for exposing a hexagon, but the cusp facing hexagonal The direction of the line formed by connecting the insulating film pattern achieve a natural preferred crystal growth direction and a 30-degree angle of the gallium nitride and, optionally, but substituting the growth of gallium nitride layer on the gallium nitride thin film is exposed to a hexagonal shape as a mask, the insulating film pattern , characterized in that the deposition of the gallium nitride layer until the {1-101} and {1-102} and {11-22} crystal plane in the side wall of the gallium nitride layer appear at the same time. ; This According to the invention, it is possible to maximize the number of crystal faces appear in the side wall of the gallium nitride layer can increase the light extraction efficiency of the LED, as compared to the conventional technique, because the manufacturing process is simple, it is possible to reduce the manufacturing cost of the LED.