METHOD OF GROWING GAN LAYER FOR MANUFACTURING LIGHT EMITTING DIODE HAVING ENHANCED LIGHT EXTRACTION CHARACTERISTICS, METHOD OF MANUFACTURING LIGHT EMITTING DIODE USING THE SAME, AND LIGHT EMITTING DIODE DEVICE THEREOF

摘要

A method of forming a GaN layer for manufacturing an LED having enhanced light extraction characteristics, a method of manufacturing the LED using the same, and the LED manufactured by the same are provided to increase a light extraction area by forming the GaN layer using a nature preference growth characteristic of a GaN crystal. A GaN thin film(20) is formed on a substrate(10). An insulating layer pattern(30) defining a hexagon opening pattern(40) for exposing the upper surface of the GaN thin film is formed, so that a direction of lines connecting cusp points of the hexagon can make 30 degrees angle with a nature preference characteristic direction. A GaN layer(50) is grown selectively on the GaN thin film exposed by the hexagon using the insulating layer pattern as a mask.