Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers

摘要

Fast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600℃. The resulting films exhibit low defect concentrations and high carrier mobilities.