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CHEMICAL VAPOR DEPOSITION OR EPITAXIAL LAYER GROWTH REACTOR AND A SUPPORTER THEREOF CAPABLE OF RELIABLY SUPPORTING A SUBSTRATE CARRIER
CHEMICAL VAPOR DEPOSITION OR EPITAXIAL LAYER GROWTH REACTOR AND A SUPPORTER THEREOF CAPABLE OF RELIABLY SUPPORTING A SUBSTRATE CARRIER
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机译:化学气相沉积或外延层生长反应器及其支持者,可可靠地支持基质载体
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摘要
PURPOSE: A chemical vapor deposition or epitaxial layer growth reactor and a supporter thereof are provided to prevent a friction slipping phenomenon between a substrate carrier and a plug-in part by smoothly rotating the substrate carrier.;CONSTITUTION: A substrate carrier(3) and a supporter(2) to support the substrate carrier are formed in a reaction chamber(1). The substrate carrier includes a first surface(3a) and a second surface(3b). At least one recess(5) is formed on the second surface of the substrate carrier. The supporter includes a spindle part(20), a supporter unit(22) including a support surface(22a), and at least one plug-in part(24). The plug-in part is extended to the first surface of the substrate carrier with a preset height.;COPYRIGHT KIPO 2013
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