首页> 外国专利> CHEMICAL VAPOR DEPOSITION OR EPITAXIAL LAYER GROWTH REACTOR AND A SUPPORTER THEREOF CAPABLE OF RELIABLY SUPPORTING A SUBSTRATE CARRIER

CHEMICAL VAPOR DEPOSITION OR EPITAXIAL LAYER GROWTH REACTOR AND A SUPPORTER THEREOF CAPABLE OF RELIABLY SUPPORTING A SUBSTRATE CARRIER

机译:化学气相沉积或外延层生长反应器及其支持者,可可靠地支持基质载体

摘要

PURPOSE: A chemical vapor deposition or epitaxial layer growth reactor and a supporter thereof are provided to prevent a friction slipping phenomenon between a substrate carrier and a plug-in part by smoothly rotating the substrate carrier.;CONSTITUTION: A substrate carrier(3) and a supporter(2) to support the substrate carrier are formed in a reaction chamber(1). The substrate carrier includes a first surface(3a) and a second surface(3b). At least one recess(5) is formed on the second surface of the substrate carrier. The supporter includes a spindle part(20), a supporter unit(22) including a support surface(22a), and at least one plug-in part(24). The plug-in part is extended to the first surface of the substrate carrier with a preset height.;COPYRIGHT KIPO 2013
机译:目的:提供一种化学气相沉积或外延层生长反应器及其支撑物,以通过平滑旋转基片载体来防止基片载体与插入部件之间的摩擦滑动现象。组成:基片载体(3)和在反应室(1)中形成支撑基板载体的支撑物(2)。基板载体包括第一表面(3a)和第二表面(3b)。在基板载体的第二表面上形成至少一个凹口(5)。支撑件包括主轴部分(20),包括支撑表面(22a)的支撑件单元(22)和至少一个插入部分(24)。插入部分以预设高度延伸到基板载体的第一表面。; COPYRIGHT KIPO 2013

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