N-TYPE DOPING TO COMPOUND SEMICONDUCTOR, CHEMICAL BEAM DEPOSITION USING THE SAME, METAL ORGANIC MOLECULAR BEAM EPITAXIAL GROWTH, GAS SOURCE MOLECULER BEAM EPITAXIAL GROWTH, AND METAL ORGANIC VAPOR PHASE DEPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a doping method such that the doping density is less likely to be affected by the temperature of a substrate and may easily be controlled, and crystal and a device of high reliability in which desired doping density is obtained. ;SOLUTION: An organic metal molecule (TEGa), hydride (AsH₃) and SiI₄ gases are fed into a deposition chamber of a chemical beam epitaxial(CBE) system. The organic metal molecules and hydride gases emitted into vacuum react on a heated substrate 2, thus forming a deposition layer of a semiconductor material, that is, GaAs. At the same time, the SiI₄ gas is given thermal energy on the surface of the grown substrate and is thermally decomposed. Thus, Si enters as a carrier into the GaAs crystal so that n-type doping is carried out. This technique may also be applied to crystal growth methods, such as, metal organic molecular beam epitaxial (MOMBE) growth, gas source MBE, metal organic chemical vapor deposition (MOCVD), and MBE.;COPYRIGHT: (C)1997,JPO