Metal organic chemical vapor deposition (MOCVD) epitaxial growth semiconductor layer tetramethyl tin additive source

摘要

A layer of semiconductor material contg. Sn, pref. as a conductivity type determining dopant, is epitaxially grown by metal organic CVD(MOCVD) including obtaining Sn by decomposition of vapour phase tetramethyltin suppled to a reaction chamber contg. the substrate. The method is esp. useful for growth of III-V, II-V and III-VI semiconductor cpds., e.g. GaAs, ZnAs, ZnP, InxTey. The tetramethyltin provides no contamination of the substrate or the reactor system. The deposited Sn has a high physical and electrical incorporation efficiency.