In Situ Mechanistic Studies of MOCVD (Metal Organic Chemical Vapor Deposition) Growth of III/V Semiconductors

摘要

Our initial studies of metal organic chemical vapor deposition for the growth of III-V semiconductors have developed in situ techniques to follow the growth process both in the gas phase and in the on the surface (in the sorbed state). The results have provided a more direct perspective of the mechanisms and kinetics of the reaction between group V alkyls and group III hydrides. Both Fourier transform infrated spectroscopy (FTIR) and detailed surface spectroscopy have been employed to study the course of the reaction and the nature of the solid products. We conclude that the crucial steps of the reaction. Occur on the surface of the solid substrate. Although gas phase decomposition of the group V organometallic occurs, the reactions leading to the formation of III-V bonds proceed on the surface. This leads us to focus on the availability of adsorbed atomic hydrogen as it relates to the removal of alkyls from the group V metal organic in the continuation of this research. (mjm)