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Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
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机译:使用有机金属化学气相沉积(MOCVD)生长非极性M平面III氮化物膜
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摘要
A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
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