Application of RTA to a 0.8-um BiCMOS process

摘要

Abstract: RTA has been established as a key process element in asub-micron BiCMOS flow. The major advantage of RTA isthat a temperature pulse $GRT 1000$DGR@C can be used tobreak-up the interfacial oxide in the polysiliconemitter contact to provide enhanced current gain withlow-emitter resistance but with little impact on theCMOS. The RTA emitter anneal also serves tosimultaneously flow BPSG to planarize the wafer priorto metallization. Contact reflow is also advantageousfor a tapered structure to improve metalstep-coverage.!12