Abstract: RTA has been established as a key process element in a sub-micron BiCMOS flow. The major advantage of RTA is that a temperature pulse $GRT 1000$DGR@C can be used to break-up the interfacial oxide in the polysilicon emitter contact to provide enhanced current gain with low-emitter resistance but with little impact on the CMOS. The RTA emitter anneal also serves to simultaneously flow BPSG to planarize the wafer prior to metallization. Contact reflow is also advantageous for a tapered structure to improve metal step-coverage.!12
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