Dept. of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, Japanrn615-8510;
Dept. of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, Japanrn615-8510 rnPhotonics and Electronics Science and Engineering Center (PESEC), Kyoto University,rnNishikyo-ku, Kyoto, Japan 615-8510;
Dept. of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto, Japanrn615-8510;
silicon carbide; bridge structure; photoelectrochemical etching; electrostatic actuating; harsh-environment MEMS;
机译:选择性光电化学刻蚀在单晶SiC中制备的静电致动悬浮带状结构
机译:n / p / n外延结构和掺杂选择性电化学刻蚀制备静电致动4H-SiC微悬臂梁谐振器
机译:GaN的偏置增强型横向光电化学刻蚀,用于制造底切微机械系统结构
机译:通过使用N / P / N外延结构和掺杂选择性电化学蚀刻来制造静电致动的4H-SiC微电机谐振器
机译:使用光电化学蚀刻技术开发和制造基于氮化镓的微盘激光器。
机译:脉冲电化学刻蚀制备均匀的4H-SiC中孔
机译:通过光电化学蚀刻制备复杂图案中的超高纵横比微结构