机译:选择性光电化学刻蚀在单晶SiC中制备的静电致动悬浮带状结构
Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan Photonics and Electronics Science and Engineering Center (PESEC), Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan;
机译:使用带隙选择性光电化学蚀刻制造的垂直取向GaN基气隙分布式布拉格反射器结构
机译:直接合成单壁碳纳米管的选择性合成,该碳纳米管选择性地悬浮在通过氢等离子体刻蚀制成的垂直排列的硅纳米结构的尖端
机译:光电化学蚀刻以制造用于恶劣环境的单晶SiC MEMS
机译:光电化学刻蚀法制备静电致动单晶4H-SiC桥结构
机译:使用光电化学蚀刻制造的氮化镓基微腔发射极。
机译:SiC含量对火花等离子体烧结制备h-BN / SiC陶瓷的组织和微波加热速率的影响
机译:通过光电化学蚀刻制备的GaN纳米结构的空间分辨阴极发光