Impact of Gate Dielectric Material on Basic Parameters of MO(I)SHEMT Devices

摘要

In this work, the behavior of MISHEMT devices with different gate materials is analyzed. Two-gate insulator materials (Al_2O_3 and SiN) were analyzed through the transfer characteristic, threshold voltage, hysteresis and transconductance. Although devices with SiN insulator present smaller hysteresis, better DIBL and it is nearest to a normally off devices, the leakage current showed to be much higher than for the Al_2O_3 counterpart. Besides the double conduction that occurs in SiN devices results in an anomalous behavior of transconductance and consequently an unexpected behavior of threshold voltage with temperature.