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Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials
Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials
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机译:核心区域中存在NMOS高k电介质的半导体CMOS器件和方法,可减轻对电介质材料的损坏
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摘要
The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. An I/O dielectric layer is formed in core and I/O regions of a semiconductor device (506). The I/O dielectric layer is removed (508) from the core region of the device. A core dielectric layer is formed in the core region (510). A barrier layer is deposited and patterned to expose the NMOS devices of the core region (512). The core dielectric layer is removed from the core NMOS devices (514). A high-k dielectric layer is formed (514) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions/devices of the core region and the NMOS and PMOS regions/devices of the I/O region.
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