S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs

机译：S3-P11：薄膜涂层，用于改善GaN的HEMTS的热性能

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Thin-film coatings for improved performances of GaN-based HEMTs are investigated. AlN coatings are used either as primary or secondary passivation to reduce the thermal resistance of the transistors.

机译：研究了用于改善GaN基血管性能的薄膜涂层。 ALN涂层用作初级或二次钝化，以降低晶体管的热阻。

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《Lester Eastman Conference on High Performance Devices》|2014年||共4页
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Aubry R.; Michel N.; Jacquet J.C.; Baczkowski L.; Patard O.; Chartier E.; Lancereau D.; Bohbot S.; Di Forte Poisson M.A.; Oualli M.; Piotrowicz S.; Delage S.L.; Djouadi A.; Scudeller Y.; Ait-Aissa K.; Calus J.; Kohn E.; Gaillard M.; Leborgne C.; Semmar N.;
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正文语种
中图分类半导体技术;
关键词
Coatings; HEMTs; III-V semiconductor materials; Logic gates; MODFETs; Passivation; Silicon compounds; AlN coatings; GaN; HEMTs; Thermal Management;

机译：涂料;鹤嘴锄;III-V半导体材料;逻辑门;MODFET;钝化;硅化合物;ALN涂层;GAN;磨损;热管理;

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专利

1. Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO [J] . Akanksha Rawat, Vivek Kumar Surana, Mudassar Meer, IEEE Transactions on Electron Devices . 2019,第6期

机译：使用热生长TiO的GaN基MOS-HEMT中的栅极电流降低和改善的DC / RF特性
2. Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface [J] . Lin Tseng-Hsing, Wang Shui-Jinn, Tu Yung-Chun, Materials science in semiconductor processing . 2016,第Null期

机译：通过双重粗糙化表面提高功率GaN基薄膜倒装芯片LED的性能
3. MODIFIED BOND COATINGS IMPROVE SERVICE LIFE OF PLASMA SPRAYED THERMAL BARRIER COATINGS AND PROTECTIVE PERFORMANCE OF OVERLAY COATINGS [J] . Daroonparvar Reza, Kay Charles M., Karthikeyan J. Advanced Materials & Processes . 2018,第5期

机译：改性粘接涂层改善了等离子体喷涂的热阻挡涂层使用寿命和覆盖涂层的保护性能
4. S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs [C] . Aubry R., Michel N., Jacquet J.C., 2014 Lester Eastman Conference on High Performance Devices . 2014

机译：S3-P11：薄膜涂层，用于改善GaN基HEMT的热性能
5. Development of multiscale thermal model for in-service performance of thermal barrier coatings. [D] . Beyazoglu, Ebubekir. 2010

机译：为隔热涂层的使用性能开发多尺度热模型。
6. Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer [O] . Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, 2020

机译：使用极薄的栅极介电层综合电离剂量效应的全电离剂量效应
7. Improved GaN-based HEMT performance by nanocrystalline diamond capping [O] . Anderson Travis J., Hobart Karl D., Tadjer Marko Jak, 2012

机译：通过纳米晶金刚石封盖改善了基于GaN的HEMT性能

S3-P11: Thin-film coatings for improved thermal performances of GaN-based HEMTs

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