EBI is capable of detecting 25 nm defects on 88 nm L/S pattern with sufficient image contrast. No significant difference in sensitivity between each mask structure. Higher image contrast obtained without AR-layer on absorber layer which might lead to fewer false defect counts. Throughput time is the biggest challenge for implement EBI in high volume manufacturing.
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机译：EBI能够以足够的图像对比度检测88nm L / S模式上的25nm缺陷。每个掩模结构之间的敏感性没有显着差异。在吸收层上没有AR层的较高图像对比度可能导致较少的错误缺陷计数。吞吐量是在大批量生产中实施EBI的最大挑战。
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