机译:使用空白检查,图案化掩模检查和晶圆检查来评估极端紫外线掩模缺陷
Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, Kaganawa 212-8583, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
EUVL Infrastructure Development Center, Inc.(EIDEC), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
EUVL Infrastructure Development Center, Inc.(EIDEC), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (9Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
Renesas Electronics Corporation, 1120, Shimokuzawa,Chuou-ku, Sagamihara, Kanagawa 252-5298, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
EUVL Infrastructure Development Center, Inc.(EIDEC), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
EUVL Infrastructure Development Center, Inc.(EIDEC), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
Toshiba Corporation, 800, Yamanoisshiki-cho,Yokkaichi, Mie 512-8550, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
Hitachi High-Technologies Corporation, 882, Ichige,Hitachinaka, Ibaraki 312-8504, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
Renesas Electronics Corporation, 751, Horiguchi,Hitachinaka, Ibaraki 312-8504, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
EUVL Infrastructure Development Center, Inc.(EIDEC), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
EUVL Infrastructure Development Center, Inc.(EIDEC), 16-1, Onogawa, Tsukuba, Ibaraki 305-8569, Japan,MIRAI - Semiconductor Leading Edge Technologies, Inc. (Selete) 16-1 Onogawa, Tsukuba-shi Ibaraki 305-8569, Japan;
extreme ultraviolet lithography; blank; mask; multilayer; absorber; phase defect; light-shield border;
机译:通过光发射电子显微镜在波长范围内检查极紫外光刻掩模坯料中的40 nm以下缺陷
机译:光电子显微镜观察光化性极紫外光刻掩模空白缺陷
机译:光电发射显微技术检测极紫外光刻多层掩模板的高分辨率光化缺陷
机译:使用空白检查,图案化掩模检查和晶圆检查来评估EUV掩模缺陷
机译:使用故意模式变形对极端紫外掩模缺陷的缺陷避免
机译:基于全非接触式蒙版的尺寸敏感艺术品的全息检查
机译:B4C覆盖层对极端紫外线掩模的影响对使用投影电子显微镜图案化掩模检查的灵敏度