Improvement of MBE-grown 0.81 μm High Power Lasers Reliability by Indium Incorporation into AlGaAs QW Active Layer

机译：通过铟掺入到Algaas QW Active层中的MBE-生长0.81μm高功率激光的可靠性

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

We discuss in this paper the indium incorporation in AlGaAs QW region of the diode lasers as effective way to improve reliability under high power CW operation. Results are shown of the MBE growth optimization of quaternary InAlGaAs QW as an active layer of graded-index separated confinement heterostructure (GRINSCH) laser on 0,81 um. Influence of AlGaAs QW replacement by InAlGaAs one on lasers degradation rate is represented.

机译：我们在本文中讨论了二极管激光器AlGaAs QW区域的铟结合，以提高高功率CW操作下的可靠性的有效方法。结果显示了季铵inalgaas qw的Mbe生长优化，作为0,81μm的分层分离隔膜异质结构（Grinsch）激光的有源层。 Algaas QW替代在inalgaas替换一个关于激光的影响劣化率。

著录项

来源
《International Workshop on the Physics of Semiconductor Devices》|2002年||共4页
会议地点
作者
A. N. Alexeev; V. P. Chaly; A. L. Dudin; Yu. V. Pogorelsky; A. L. Ter-Martirosyan; A. P. Shkurko;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 N-532;
关键词

相似文献

外文文献
中文文献
专利

1. Radiative characteristics of two-dimensional arrays of AlGaAs/GaAs diode lasers emitting at the wavelength 0.81 mm and intended to pump solid-state active elements [J] . A S Adivankin, V V Bezotosnyi, N V Markova, Quantum electronics . 1996,第11期

机译：二维AlGaAs / GaAs二极管激光器二维阵列的辐射特性，波长为0.81 mm，用于泵浦固态有源元件
2. Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates [J] . Brovelli L.R., Arent D.J. IEEE Journal of Quantum Electronics . 1991,第6期

机译：在非平面衬底上生长的高功率应变层InGaAs-AlGaAs激光器中的铟迁移和可控的横向带隙变化
3. THE LASING WAVELENGTH OF QW ACTIVE REGION OF AlGaAs SCH LASERS [J] . ZBIGNIEW KOZIOL, SERGEY I. MATYUKHIN Romanian journal of physics . 2012,第3a4期

机译：AlGaAs SCH激光器QW有源区的发射波长
4. Improvement of MBE-grown 0.81 μm High Power Lasers Reliability by Indium Incorporation into AlGaAs QW Active Layer [C] . A. N. Alexeev, V. P. Chaly, A. L. Dudin, International Workshop on the Physics of Semiconductor Devices . 2002

机译：通过铟掺入到Algaas QW Active层中的MBE-生长0.81μm高功率激光的可靠性
5. High-power indium gallium arsenic phosphide-active diode lasers at lambda = 808 nm. [D] . Wade, Jerome Kent. 2004

机译：λ= 808 nm的高功率磷化铟镓砷有源二极管激光器。
6. Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers [O] . Giuseppe Tandoi, Charles N. Ironside, John H. Marsh, -1

机译：输出电源限制和被动模式锁定GaAs / Algaas量子阱激光器的改进
7. AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p ‐cladding for high pulsed power emission [O] . Eugene A. Avrutin, Boris S. Ryvkin, Juha T. Kostamovaara 2021

机译：AlgaAs / GaAs不对称 - 波导，短腔激光二极管设计，靠近P-Cladding的散装有源层，用于高脉冲发射

Improvement of MBE-grown 0.81 μm High Power Lasers Reliability by Indium Incorporation into AlGaAs QW Active Layer

摘要

著录项

相似文献

相关主题

期刊订阅