Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates

Brovelli L.R.; Arent D.J.

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Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates

机译：在非平面衬底上生长的高功率应变层InGaAs-AlGaAs激光器中的铟迁移和可控的横向带隙变化

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摘要

Strained single quantum well (SQW) InGaAs-AlGaAs graded-index separate confinement heterostructure (GRINSCH) lasers were grown by molecular beam epitaxy over nonplanar

机译：通过分子束外延在非平面上生长应变单量子阱（SQW）InGaAs-AlGaAs梯度折射率分离限制异质结构（GRINSCH）激光器

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来源
《IEEE Journal of Quantum Electronics》 |1991年第6期|P.1470-1475|共6页
作者
Brovelli L.R.; Arent D.J.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
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专利

1. GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates [J] . Koyama F., Liou K.-Y. Electronics Letters . 1993,第24期

机译：GaInAs / GaInAsP应变量子阱单片电吸收调制器/放大器，通过非平面衬底的横向带隙控制
2. High-power, high-temperature InGaAs-AlGaAs strained-layer quantum-well diode lasers [J] . Wang C.A., Choi H.K. Electronics Letters . 1994,第8期

机译：大功率高温InGaAs-AlGaAs应变层量子阱二极管激光器
3. Simple reliable processing technique for low-threshold high-power strained InGaAs-AlGaAs GRINSCH SQW laser diodes [J] . Vermaerke F., Moerman I. IEE Proceedings. Part J . 1993,第1期

机译：低阈值大功率InGaAs-AlGaAs GRINSCH SQW激光二极管的简单可靠的处理技术
4. Catastrophic degradation in high-power InGaAs-AlGaAs strained quantum well lasers and InAs-GaAs quantum dot lasers [C] . Sin Yongkun, Stephen LaLumondiere, Brendan Foran, SPIE Conference on Novel In-Plane Semiconductor Lasers . 2013

机译：高功率Ingaas-Algaas的灾难性降解应变量子阱激光器和InAs-GaAs量子点激光器
5. Short-wavelength indium aluminum gallium phosphide quantum well lasers and indium phosphide quantum dot coupled to strained indium aluminum gallium phosphide quantum well lasers grown by MOCVD [D] . Heller, Richard Dean, Jr. 2003

机译：短波长铟铝镓磷化镁井激光器和磷化铟量子点耦合到应变铟铝镓磷化钯量子孔孔孔，由MOCVD种植
6. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition [O] . Wenliang Wang, Weijia Yang, Zuolian Liu, -1

机译：脉冲激光沉积在Si（111）衬底上生长AlN外延膜的界面反应控制及其机理
7. 1.55 Î¼m direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates [O] . Gallacher, K, Velha, P., Paul, D.J., 2012

机译：Si衬底上生长的应变n-Ge量子阱中的1.55μm直接带隙电致发光
8. Uniform Linear Arrays of Strained-Layer InGaAs-AlGaAs Quantum-Well Ridge-Waveguide Diode Lasers Fabricated by ECR-IBAE [R] . Woodhouse, J. D., Wang, C. A., Donnelly, J. P., 1994

机译：ECR-IBaE制备的应变层InGaas-alGaas量子阱脊波导二极管激光器的均匀线性阵列

Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates

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