Uniform Linear Arrays of Strained-Layer InGaAs-AlGaAs Quantum-Well Ridge-Waveguide Diode Lasers Fabricated by ECR-IBAE

摘要

Uniform linear arrays of strained layer multiple quantum well InGaAs AlGaAs ridgewaveguide diode lasers have been fabricated that operate near 980 nm and have low threshold currents I(tb) and high differential quantum efficiencies etad. Uniformity was achieved by a combination of uniform ion-beam-assisted etching with an electron cylotron resonance ion source and uniform organometallic vapor phase epitaxial (OMVPE) growth. We investigated the effects of device geometry, namely, ridge width, cavity length, and remaining cladding thickness outside the ridge t, on Ith and etad. For uncoated lasers with 500-micrometer-long cavities,