ION BEAM SYNTHESIS OF SiC ON INSULATOR STRUCTURES

摘要

In this work, we present a highly versatile alternative approach for the fabrication of SiC on insulator (SiCOI) material, based on the ion beam synthesis (IBS) technology. Combined with a bond and etch back technique, IBS has allowed the synthesis of high crystalline quality β-SiC on Insulator layers with interfaces free of voids or bubbles. The flexibility of ion implantation has also allowed the extension of the IBS technology to the synthesis of polycrystalline SiC on insulator (Poly-SiCOI) structures by direct conversion of polycrystalline Si on insulator layers. As another application of IBS, n-doped SiC layers have been synthesized with a novel method based on P~+ pre-doping of the Si wafers before the IBS of SiC. Our electrical data, together with the absence of additional stress related to P-implant suggests that this technique could be suitable to avoid effects related to the ion implantation damage in the SiC lattice.