Ion beam synthesis of polycrystalline SiC on SiO2 structures for MEMS applications

摘要

SiC on insulator for microelectromechanical systems has been directly synthesized by high-dose carbon ion implantation of amorphous or polycrystalline Si on SiO2. For this, a four-step implant process has been defined by TRIM simulation. X-ray diffraction and in-depth Auger electron spectroscopy measurements corroborate the formation of a stoichiometric polycrystalline SiC layer above the sacrificial oxide. These data demonstrate the ability of the process for the direct synthesis of complex SiC on insulator (SiCOI) structures. Micromechanical test structures have been fabricated from these layers, which allowed the comparison of residual stress according to the synthesis process of the layers. [References: 10]