Nitrogen passivation of interface states in sio2/sic structures

摘要

By substantially free of containing the oxide skin(coating) annealing oxide skin(coating) on the silicon carbide layer for making nitridation in nitrogen environment. Annealing can be carried out in greater than about 900 DEG C, for example, about 1100 DEG C, about 1200 DEG C or about 1300 DEG C of temperature. Make nitridation oxide skin(coating) annealing can below about 1 atmospheric pressure, for example, about 0.01- about 1atm or particularly from about 0.It is carried out under the pressure of 2atm. The oxide skin(coating) of nitridation can be the oxide skin(coating) grown in the environment containing N2O and/or NO, the oxide skin(coating) annealed in the environment containing N2O and/or NO, or the oxide skin(coating) for growing and annealing in the environment containing N2O and/or NO.