Ion-Beam Synthesis of InSb Nanocrystals in the Buried SiO_2 Layer of a Silicon-on-Insulator Structure

摘要

The ion-beam synthesis of InSb nanocrystals in the buried SiO_2 layer of a silicon-on-insulator structure is investigated. The distributions of In and Sb atoms after annealing at a temperature of T_a = 500- 1100℃ are studied. It is established that the redistribution of implanted atoms is unsteadily dependent on the annealing temperature. The formation of InSb nanocrystals occurs at T_a ≥ 800℃ near the Si/SiO_2 interface and at a depth corresponding to the mean paths R_p. Analysis of the profiles of implanted atoms and of the structure and depth distribution of nanocrystals formed allows an inference regarding the two-stage character of formation of the InSb phase. In the initial stage, antimony precipitates are formed; further the precipitates serve as nuclei for indium and antimony to flow to them.