Nickel induced lateral crystallization of amorphous silicon thin film transistor by arpid thermal anneal

摘要

We studied the RTA induced nickel promoted metal induced crystallization, MIC, of amorphous silicon. XRD data inducate that at 500 deg C crystallization commences after an incubation time of 4 minutes and is completed after 10 to 15 minutes. Thin film transistors, TFTs, fabricated with the MILC process had channel mobility o f 34 cm~2/Vs when processed at 560 deg C and 11 cm~2/Vs when processed at 620 deg C. The corresponding grain boundary trap densities were 4.8x10~(-2) cm~(-2) and 3.6x10~(13), respoectively.