Lateral transfer of light-induced charge carriers and electric field in locally illuminated modulation doped AlGaAs/GaAs heterostructures

摘要

We have shown that charge carriers generated in modulation-doped heterostructures by locao optical illumination are transferred along the heterostructure plane over extremely large distance which may be as large as several millimeters. The nature of this effect is caused by spatial separation of the light-induced electrons and holes in the built-in electric field and high conductivity of 2D electron gas.