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InGaAlP Schottky Field Effect Transistor with AlGaAs Carrier Supply Layer
InGaAlP Schottky Field Effect Transistor with AlGaAs Carrier Supply Layer
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机译:具有AlGaAs载流子供应层的InGaAlP肖特基场效应晶体管
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摘要
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprises a buffer layer, a channel layer, a carrier supply layer, a Schottky barrier layer and a cap layer sequentially formed on a compound semiconductor substrate; the cap layer has a gate recess, a bottom of the gate recess is defined by the Schottky barrier layer; a source electrode and a drain electrode are formed respectively on the cap layer at two sides with respect to the gate recess, the source electrode and the drain electrode form respectively an ohmic contact with the cap layer; a gate electrode is formed on the Schottky barrier layer within the gate recess, the gate electrode and the Schottky barrier layer form a Schottky contact; wherein the carrier supply layer is made of AlGaAs; the Schottky barrier layer is made of InGaAlP.
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