Study and Analysis of AlGaAs/GaAs Modulation Doped Field-Effect Transistors Incorporating P-Type Schottky Gate Barriers

摘要

The design and dc performance of enhanced Schottky barrier modulation doped transistors (ESMODFETs) is presented. The theory required to estimate the layer thicknesses and dopings required for a desired barrier height is developed. The experimental results show and increase from 0.8eV to 1.6eV for the ESMODFET versus the standard MODFET, with good correlation between theory and experiment. The ohmic contact resistance of the ESMODFET is comparable to that of the MODFET. The process used to fabricate the ESMODFET is similar to that used for the MODFET. (Theses)