Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging

摘要

Cathodoluminescence characteristics of modulation-doped transistor heterostructures AlGaAs/InGaAs/AlGaAs with the width of quantum well ~12 nm are investigated in this work. The investigation was conducted by means of cathodoluminescence generation depth changing, the depth depends on electron energy. So this fact permits to get cathodoluminescence characteristics from different depth of the investigated structure. The influence of gamma-radiation with several doses on the cathodoluminescence spectra was examined.